j^zmi-donduct oi , li ne. 20 stern ave. springfield, new jersey 07081 tip41, tip41a, tip41b, tip41c (npn); TIP42, TIP42a, TIP42b, TIP42c (pnp) telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon plastic power transistors designed for use in general purpose amplifier and switching applications, features ? bsd ratings: machine model, c; > 400 v human body model, 3b; > 8000 v ? epoxy meets ul 94 v-0 @ 0.125 in ? pb-free packages are available* 6 ampere complementary silicon power transistors 40-60-80-100 volts, 65 watts maximum ratings rating collector-emitter voltage tip41 , TIP42 tip41a.TIP42a tip41b, TIP42b tip41c, TIP42c collector-base voltage tip41 , TIP42 tip41a, TIP42a tip41b, TIP42b tip41c, TIP42c emitter-base voltage collector current- continuous peak base current total power dissipation @ tc = 25c " derate above 25c total power dissipation @ ta = 25c derate above 25c undamped inductive load energy (note 1) operating and storage junction, temperature range symbol vceo vcb veb lc ib pd pd e tj. tstg value 40 60 80 100 40 60 80 100 5.0 6.0 10 2.0 65 0.52 2.0 0.016 62.5 -65 to + 150 unit vdc vdc vdc adc adc w w/c w w/c mj c thermal characteristics characteristic thermal resistance, junction-to-case thermal resistance, junction-to-ambient symbol rhjc rbja max 1.67 57 unit c/w c/w stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. ic = 2.5a, l = 20mh, p.r.f. = 10 hz, vcc = 10v, rbe = 100 q. marking diagram to-220ab base 2 collector 3 emitter 4. collector nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
tip41, tip41a, tip41b, tip41c (npn); TIP42, TIP42a, TIP42b, TIP42c (pnp) electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol min max unit off characteristics collector-emitter sustaining voltage (note 2) tip41 , TIP42 (lc = 30 madc, ib = 0) tip41a, TIP42a tip41b, TIP42b tip41c, TIP42c collector cutoff current (vce = 30 vdc, ib = 0) tip41, tip41a, TIP42, TIP42a (vce = 60 vdc, ib = 0) tip41 b, tip41 c, TIP42b, TIP42c collector cutoff current (vce = 40 vdc, veb = 0) , tip41 , TIP42 (vce = 60 vdc, veb = 0) tip41a, TIP42a (vce = 80 vdc, veb = 0) tip41b, TIP42b (vce = 100 vdc, veb = 0) tip41c, TIP42c emitter cutoff current (vbe = 5.0 vdc, lc = 0) vceo(sus) 'ceo ices iebo 40 60 80 100 - - - - 0.7 0.7 400 400 400 400 1.0 vdc madc nadc madc on characteristics (note 2) dc current gain (lc = 0.3 adc, vce = 4.0 vdc) (lc = 3.0 adc, vce = 4.0 vdc) collector-emitter saturation voltage (lc = 6.0 adc, ib = 600 madc) base-emitter on voltage (lc = 6.0 adc, vce = 4.0 vdc) hfe vce(sat) vbe(oh) 30 15 - - 75 1.5 2.0 - vdc vdc dynamic characteristics current-gain ? bandwidth product (lc = 500 madc, vce = 10 vdc, ftest = 1 .0 mhz) small-signal current gain (lc = 0.5 adc, vce = 10 vdc, f = 1 .0 khz) ft hte 3.0 20 - - mhz -
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